S35D4M5
Main Features
- Mature SiGe BiCMOS technology
- Fully compatible with the 0.35µm base process licensed from TSMC
- Integration of a Heterojunction Bipolar Transistor (HBT) module to adress high-speed applications
- Gate density of 23k/mm²
Technology Characteristics
- 0.35µm technology node
- 200mm wafer size – Premstätten fab (Austria)
- 31 masks
- P-type substrate
- Dual well
- LOCOS isolation
- 76A and 150A gate oxides
- Epitaxial growth of SiGe layer to achieve high-speed bipolar transistors
- Second poly layer for resistors and capacitors
- 4 metal (Al) layers for interconnexion – thick top metal (2.8µm)
Device Characteristics
- 3.3V and 5V operating voltages
- 7 GHz max operating frequency
- Qualified from -40°C to 125°C, for automotive and medical markets
- Cut-off frequency of high-speed npn HBT : 65GHz (2.7V BVCEO)
- Cut-off frequency of 5V npn HBT : 38GHz (5.5V BVCEO)
- Lowest noise figure less than 0.6 dB @ 2GHz
- High-resistive poly (1.2kohms/square)
- Poly-insulator-poly capacitor (0.9fF/µm²)
- Metal-insulator-metal capacitor (1.25fF/µm²)
- High Q inductors and varactors
RAM, EEPROM and OTP memories (poly fuses) available on request
Wafer cross section for high speed and 5V HBT module
Design-Kit Content
Basic libraries:
- Primitive devices
- Primitive RF devices
- Primitive ESD devices
Analog libraries:
- Low-voltage analog standard cells
- 4 metal analog power supply pads & analog I/O pads
- 4 metal 3-bus analog power supply pads & analog I/O pads
- Core-limited 4 metal 3-bus analog power supply pads & analog I/O pads
- 4 metal RF pad library
- 4 metal 3-bus, RF pad library
Digital libraries:
- 3.3V digital standard core cells
- Dense 3.3V digital standard core cells
- 5V digital standard core cells
- 3-bus 3.3V digital standard cells
- Dense 3-bus 3.3V digital standard cells
- 3-bus 5V digital standard core cells
- 4 metal digital input/output/bidirectional buffers & power pads – 3.3V supply
- 4 metal digital input/output/bidirectional buffers & power pads – 5V supply
- 4 Metal 3-Bus digital input/output/bidirectional buffers & power pads – 3.3V supply
- Core-limited 4 metal 3-bus digital input/output/bidirectional buffers & power pads – 3.3V supply
- Core-limited 4 metal digital input/output/bidirectional buffers & power pads – 5V supply
CAD Tools
Cadence
- Virtuoso ADE suite (design exploration and analysis)
- Genus (physical synthesis)
- Spectre (electrical simulation)
- Xcelium (logic simulation)
- Assura (physical verification)
- Quantus (parasitic extraction)
- Voltus (power analysis)
- Innovus (digital implementation)
Siemens
- Calibre (physical verification)
- QuestaSim (logic simulation)
- QuestaFormal (formal verification)
Synopsys
- VTRAN (design exploration and analysis)
- Design compiler (physical synthesis)
- PrimeTime (static timing analysis)
- HSpice (electrical simulation)
Usual application areas
Radio frequency (RF) and communication devices, high-speed digital circuits, signal processing, imaging and sensing systems, etc.
Run Dates
Only dedicated runs on request – no more MPW runs
Turnaround Time
- 18 weeks from foundry tape-out to wafer fab-out
- 5 additional weeks for dicing and packaging