H35B4O1
Main Features
- High-voltage CMOS technology
- Derived from H35B4D3 technology
- Integration of photodiodes near digital/analog electronics
Technology Characteristics
- 0.35µm technology node
- 200mm wafer size – Premstätten fab (Austria)
- 26 masks
- Epitaxial growth of p-epi layer on p-type substrate to lower the photodiode dark current
- Triple well
- LOCOS isolation
- 76A and 479A gate oxides
- Second poly layer for resistors and capacitors
- 4 metal (AlCu) layers for interconnexion – thin top metal
- Deposition of anti-reflective coating on passivation layer and removal of all inter-metal dielectrics to increase light transmission through the back-end stack
Device Characteristics
- 3.3V and 20V operating voltages
- 1 GHz max operating frequency
- Qualified from -40°C to 150°C, for automotive and medical markets
- Low voltage well-isolated transistors and standard substrate-based transistors
- Extensive range of LDMOS transistors supporting up to 120V
- Full set of bipolar transistors
- High-resistive poly (1.2kohms/square)
- Poly-insulator-poly capacitor (0.9fF/µm²)
- ESD protection supporting up to 8kV
RAM, EEPROM and OTP memories (poly fuses) available on request
Design-Kit Content
Basic libraries:
- Primitive devices
- Primitive RF devices
- Primitive ESD devices
Analog libraries:
- Low-voltage analog standard cells
- 4 metal analog power supply pads & analog I/O pads
- 4 metal 3-bus analog power supply pads & analog I/O pads
- Core-limited 4 metal 3-bus analog power supply pads & analog I/O pads
- 4 metal 120V floating analog power supply pads & analog I/O pads
Digital libraries:
- 3.3V digital standard core cells
- Dense 3.3V digital standard core cells
- 3-bus 3.3V digital standard cells
- Dense 3-bus 3.3V digital standard cells
- 4 metal digital input/output/bidirectional buffers & power pads – 3.3V supply
- 4 Metal 3-Bus digital input/output/bidirectional buffers & power pads – 3.3V supply
- Core-limited 4 metal 3-bus digital input/output/bidirectional buffers & power pads – 3.3V supply
- 3.3V floating digital standard core cells
- Dense 3.3V floating digital standard core cells
- 4 metal floating digital input/output/bidirectional buffers & power pads
- 4 metal 120V floating digital input/output/bidirectional buffers & power pads
CAD Tools
Cadence
- Virtuoso ADE suite (design exploration and analysis)
- Genus (physical synthesis)
- Spectre (electrical simulation)
- Xcelium (logic simulation)
- Assura (physical verification)
- Quantus (parasitic extraction)
- Voltus (power analysis)
- Innovus (digital implementation)
Siemens
- Calibre (physical verification)
- QuestaSim (logic simulation)
- QuestaFormal (formal verification)
Synopsys
- VTRAN (design exploration and analysis)
- Design compiler (physical synthesis)
- PrimeTime (static timing analysis)
- HSpice (electrical simulation)
Usual Application areas
Power management, motor control, printer driver, DC/DC converter, switched power supply, touch panel controller, LED and OLED driver, smart meter, sensor and MEMS interfaces, etc.
Prices
- 1’000 euros/mm²
- 900 euros/mm² for registered Europractice member
- Minimum billing area of 10 mm²
- Delivery of 40 bare dies
Contact
Run Dates
- 2 MPW runs per year
- Usually in May and November
- Next submission deadline to CIME-P : please refer to run schedule
Turnaround Time
- 18 weeks from foundry tape-out to wafer fab-out
- 5 additional weeks for wafer dicing and chip packaging