C35B4O1

Main Features
  • Mature opto CMOS technology
  • Derived from C35B4C3 technology
  • Integration of photodiodes near digital/analog electronics
Technology Characteristics
  • 0.35µm technology node
  • 200mm wafer size
  • 19 masks
  • Epitaxial growth of p-epi layer on p-type substrate to lower the photodiode dark current
  • LOCOS isolation
  • 3.3V and 5V operating voltages
  • 4 metal (AlCu) layers for interconnexion
  • Deposition of anti-reflective coating on passivation layer to increase light transmission through the back-end stack
  • Second poly layer for resistors and capacitors
  • Poly-insulator-poly capacitor (0.9fF/µm²)
  • 1 GHz max operating frequency
  • Qualified from -40°C to 125°C, for automotive and medical markets

RAM, EEPROM and OTP memories (poly fuses) available on request

    Wafer cross section of the photodiode (Arc process option)

    Prices

    • 800 euros/mm²
    • 700 euros/mm² for registered Europractice member
    • Minimum billing area of 20 mm²
    • Delivery of 40 bare dies

     

    Contact

    Design-Kit Content
    Basic libraries:
    • Primitive devices
    • Primitive RF devices
    • Primitive ESD devices
    Analog libraries:
    • Low-voltage analog standard cells
    • 4 metal analog power supply pads & analog I/O pads
    • 4 metal 3-bus analog power supply pads & analog I/O pads
    • Core-limited 4 metal 3-bus analog power supply pads & analog I/O pads
    Digital libraries:
    • 3.3V digital standard core cells
    • Dense 3.3V digital standard core cells
    • 5V digital standard core cells
    • 3-bus 3.3V digital standard cells
    • Dense 3-bus 3.3V digital standard cells
    • 3-bus 5V digital standard core cells
    • 4 metal digital input/output/bidirectional buffers & power pads – 3.3V supply
    • 4 metal digital input/output/bidirectional buffers & power pads – 5V supply
    • 4 Metal 3-Bus digital input/output/bidirectional buffers & power pads – 3.3V supply
    • Core-limited 4 metal 3-bus digital input/output/bidirectional buffers & power pads – 3.3V supply
    • Core-limited 4 metal digital input/output/bidirectional buffers & power pads – 5V supply
    CAD Tools
    Cadence
    • Virtuoso ADE suite (design exploration and analysis)
    • Genus (physical synthesis)
    • Spectre (electrical simulation)
    • Xcelium (logic simulation)
    • Assura (physical verification)
    • Quantus (parasitic extraction)
    • Voltus (power analysis)
    • Innovus (digital implementation)
    Siemens
    • Calibre (physical verification)
    • QuestaSim (logic simulation)
    • QuestaFormal (formal verification)
    Synopsys
    • VTRAN (design exploration and analysis)
    • Design compiler (physical synthesis)
    • PrimeTime (static timing analysis)
    • HSpice (electrical simulation)
    Run Dates
    • 3 MPW runs per year
    • Usually in February, July and November
    • Next submission deadline to CIME-P: please refer to the run schedule.
    Turnaround Time
    • 12 weeks from foundry tape-out to wafer fab-out
    • 5 additional weeks for dicing and packaging