C35B4C3

Main Features
  •  Mature CMOS technology
  •  Fully compatible with the 0.35µm base process licensed from TSMC
  •  Gate density of 23k/mm²
  •  Well-suitable for digital, analog and mixed-signal systems
Technology Characteristics
  •  0.35µm technology node
  •  200mm wafer size
  •  20 masks
  •  P-type substrate
  •  LOCOS isolation
  •  3.3V and 5V operating voltages
  •  4 metal (Al) layers for interconnexion
  •  Second poly layer for resistors and capacitors
  •  High-resistive poly (1.2kohms/square)
  •  Poly-insulator-poly capacitor (0.9fF/µm²)
  •  1 GHz max operating frequency
  •  Qualified from -40°C to 125°C, for automotive and medical markets

RAM, EEPROM and OTP memories (poly fuses) available on request

Wafer cross section

Prices

  • 640 euros/mm²
  • 580 euros/mm² for registered Europractice member
  • Minimum billing area of 7 mm²
  • Delivery of 40 bare dies

Contact

Design-Kit Content
Basic libraries :
  • Primitive devices
  • Primitive RF devices
  • Primitive ESD devices
Analog libraries :
  • Low-voltage analog standard cells
  • 4 metal analog power supply pads & analog I/O pads
  • 4 metal 3-bus analog power supply pads & analog I/O pads
  • Core-limited 4 metal 3-bus analog power supply pads & analog I/O pads
Digital libraries :
  •  3.3V digital standard core cells
  •  Dense 3.3V digital standard core cells
  •  5V digital standard core cells
  •  3-bus 3.3V digital standard cells
  •  Dense 3-bus 3.3V digital standard cells
  •  3-bus 5V digital standard core cells
  •  4 metal digital input/output/bidirectional buffers & power pads – 3.3V supply
  •  4 metal digital input/output/bidirectional buffers & power pads – 5V supply
  •  4 Metal 3-Bus digital input/output/bidirectional buffers & power pads – 3.3V supply
  •  Core-limited 4 metal 3-bus digital input/output/bidirectional buffers & power pads – 3.3V supply
  •  Core-limited 4 metal digital input/output/bidirectional buffers & power pads – 5V supply
CAD Tools
Cadence
  • Virtuoso ADE suite (design exploration and analysis)
  • Genus (physical synthesis)
  • Spectre (electrical simulation)
  • Xcelium (logic simulation)
  • Assura (physical verification)
  • Quantus (parasitic extraction)
  • Voltus (power analysis)
  • Innovus (digital implementation)
Siemens
  • Calibre (physical verification)
  • QuestaSim (logic simulation)
  • QuestaFormal (formal verification)
Synopsys
  • VTRAN (design exploration and analysis)
  • Design compiler (physical synthesis)
  • PrimeTime (static timing analysis)
  • HSpice (electrical simulation)
Run Dates
  • 3 MPW runs per year: usually in February, July and November.
  • Next submission deadline to CIME-P: please refer to the run schedule.
Turnaround Time
  • 12 weeks from foundry tape-out to wafer fab-out
  • 5 additional weeks for wafer dicing and chip packaging